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SGS23N60UF
April 2001
IGBT
SGS23N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* High speed switching * Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A * High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
GCE
TO-220F
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
SGS23N60UF 600 20 23 12 92 73 29 -55 to +150 -55 to +150 300
Units V V A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 1.7 62.5 Units C/W C/W
(c)2001 Fairchild Semiconductor Corporation
SGS23N60UF Rev. A
SGS23N60UF
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C A nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---720 100 25 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------17 27 60 70 115 135 250 23 32 100 220 205 320 525 49 11 14 7.5 --130 150 --400 --200 250 --800 80 17 22 -ns ns ns ns J J J ns ns ns ns J J J nC nC nC nH
VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from PKG
(c)2001 Fairchild Semiconductor Corporation
SGS23N60UF Rev. A
SGS23N60UF
100 Common Emitter T C = 25 80 20V 15V
50 Common Emitter VGE = 15V TC = 25 TC = 125
Collector Current, I C [A]
60
12V
Collector Current, IC [A]
8
40
30
40
V GE = 10V
20
20
10
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage Characteristics
4
18 Common Emitter VGE = 15V 15
VCC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
3
24A
Load Current [A]
12
2
12A
9
IC = 6A 1
6
3
0 0 30 60 90 120 150
0
Duty cycle : 50% T C = 100 Power Dissipation = 16W 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
16
16
12
12
8
8 24A 4 IC = 6A 0 12A
4 IC = 6A 0 0 4
24A 12A
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGS23N60UF Rev. A
SGS23N60UF
1200 Common Emitter V GE = 0V, f = 1MHz T C = 25 Cies
200 Common Emitter VCC = 300V, VGE = 15V IC = 12A TC = 25 TC = 125
1000
Ton
100
Capacitance [pF]
800
Switching Time [ns]
Tr
600 Coes 400
200
Cres
0 1 10 30
10 1 10 100 200
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, V GE = 15V IC = 12A T C = 25 T C = 125
1000
Eoff
Switching Loss [uJ]
Toff
Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = 15V IC = 12A TC = 25 TC = 125 30 1 10 100 200
Tf Toff
100 Tf 50 1 10 100 200
Gate Resistance, R G [ ]
Gate Resistance, R G []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200 Common Emitter V CC = 300V, VGE = 15V RG = 23 TC = 25 TC = 125
1000 Common Emitter V CC = 300V, V GE = 15V RG = 23 T C = 25 T C = 125
100
Switching Time [ns]
Switching Time [ns]
Toff Tf
Ton
Toff 100
Tr 10 4 8 12 16 20 24 50
Tf
4
8
12
16
20
24
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGS23N60UF Rev. A
SGS23N60UF
1000
15 Common Emitter RL = 25 TC = 25
Gate - Emitter Voltage, VGE [ V ]
12
Switching Loss [uJ]
9 300 V 6 VCC = 100 V 3 200 V
100
Eoff Eon
Eon Eoff
Common Emitter V CC = 300V, V GE = 15V RG = 23 T C = 25 T C = 125 4 8 12 16 20 24
10
0 0 10 20 30 40 50
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300 100 IC MAX. (Pulsed)
200 100
Collector Current, IC [A]
IC MAX. (Continuous) 10 1
50us 100us
Collector Current, IC [A]
10
1
DC Operation Single Nonrepetitive Pulse T C = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000
1
0.1 0.05
Safe Operating Area VGE = 20V, TC = 100 0.1 1 10 100 1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
5
Thermal Response, Zthjc [/W]
1
0.5
0.2 0.1 0.1 0.05 0.02 0.01
Pdm t1 t2
0.01 0.005 10
-5
single pulse
Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
-4
10
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2001 Fairchild Semiconductor Corporation SGS23N60UF Rev. A
SGS23N60UF
Package Dimension
TO-220F (FS PKG CODE AQ)
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation SGS23N60UF Rev. A
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H1

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